Substrate treating apparatus

ABSTRACT

A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.12/163,951, which claims priority to Japanese Patent Application No.2007-172496, filed Jun. 29, 2007. The disclosures of both of theseapplications are hereby incorporated by reference in their entirety forall purposes.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

This invention relates to a substrate treating apparatus for performinga series of treatments of substrates such as semiconductor wafers, glasssubstrates for liquid crystal displays, glass substrates for photomasks,and substrates for optical disks (hereinafter called simply“substrates”).

(2) Description of the Related Art

Conventionally, a substrate treating apparatus is used to form a resistfilm on substrates, allows the substrates having the resist film formedthereon to be exposed in a separate exposing machine, and develops theexposed substrates. Specifically, the substrate treating apparatusincludes a plurality of blocks each having various chemical treatingunits such as coating units for forming resist film and heat-treatingunits arranged with a single main transport mechanism. This apparatustransports substrates to each block to be treated therein (as disclosedin Japanese Unexamined Patent Publication No. 2003-324139, for example).

The conventional apparatus with such a construction has the followingdrawback.

In the conventional apparatus, the main transport mechanism goes throughfive to 10 transporting steps for treating each substrate in its block,and each transporting step takes several seconds. Supposing that thenumber of transporting steps is six and each step takes five seconds,the throughput in the block can be raised up to 30 seconds per substrate(or 120 substrates per hour). However, there is not much room forreducing the number of transporting steps for the single main transportmechanism or shortening the time for each transporting step. Hence, itis difficult to achieve a further improvement in throughput of eachblock. It is therefore difficult to improve the throughput of the entireapparatus. One possible solution is to employ multiple main transportmechanisms. However, an increase in the number of main transportmechanisms in each block entails the inconvenience of increasing thechemical treating units and heating units, thereby enlarging thefootprint.

SUMMARY OF THE INVENTION

One of the objectives of this invention is to provide a substratetreating apparatus that can improve throughput without enlarging thefootprint of the substrate treating apparatus.

In one embodiment, a substrate treating apparatus comprising a pluralityof substrate treatment lines each including a plurality of maintransport mechanisms arranged horizontally, and a plurality of treatingunits provided for each of the main transport mechanisms for treatingsubstrates; each of the substrate treatment lines carrying out a seriesof treatments of the substrates, with each of the main transportmechanisms transporting the substrates to the treating units associatedtherewith, and transferring the substrates to the other main transportmechanism horizontally adjacent thereto; wherein the substrate treatmentlines are arranged vertically.

According to this embodiment, the plurality of substrate treatment linesare arranged vertically, so that the substrates are treated in parallelthrough the respective substrate treatment lines. This realizes anincreased throughput of the substrate treating apparatus. Since thesubstrate treatment lines are arranged vertically, an increase in theinstallation area of the substrate treating apparatus can be avoided.

The horizontal arrangement of the main transport mechanisms isarbitrary. For example, the main transport mechanisms may be arranged inone row or a plurality of rows extending in one direction. The maintransport mechanisms may be arranged at different points on an imaginarycurve, or may be arranged in a zigzag pattern. The arrangement of thetreating units associated with each main transport mechanism is alsoarbitrary. The treating units may be arranged horizontally, stackedvertically, or arranged crisscross in a matrix form.

In an alternate embodiment, the main transport mechanisms and thetreating units in the respective substrate treatment lines may be insubstantially the same arrangement in plan view. One of the benefitsrealized by this arrangement is that the apparatus construction can besimplified.

The substrate treating apparatus may further comprise gas supplyopenings for supplying a gas into transporting spaces where the maintransport mechanisms are installed, and gas exhaust openings forexhausting the gas from the transporting spaces. This provides thebenefit of maintaining the transportation areas substantially free fromparticulate matter.

In addition, the area of the transporting spaces for each substratetreatment line may be blocked off and separate gas supply openings andgas exhaust openings can be provided for each substrate treatment line.This will result in even cleaner transporting spaces.

The gas supply openings may be formed in a blowout unit and the gasexhaust openings formed in an exhaust unit with at least one of the gasblowout unit and the gas exhaust unit blocking off atmosphere for eachof the substrate treatment lines. This realizes a simplified apparatusconstruction.

The gas supply openings may be arranged in a position higher than thegas exhaust openings further reducing possibility of particulatecontamination.

The gas supply openings may be arranged over the transporting spaces,and the gas exhaust openings under the transporting spaces. Thisarrangement results in downward gas currents and helps to keep thetransporting spaces cleaner.

In still another embodiment, the apparatus may further comprise anindexer's transport mechanism for transporting the substrates to andfrom a cassette for storing a plurality of substrates, wherein theindexer's transport mechanism transfers the substrates to and from anend transport mechanism which is one of the main transport mechanismslocated in one end region of each of the substrate treatment lines, theindexer's transport mechanism transferring the substrates to and from anupper one of the end transport mechanisms at a height adjacent a lowerportion of the upper one of the end transport mechanisms, andtransferring the substrates to and from a lower one of the end transportmechanisms at a height adjacent an upper portion of the lower one of theend transport mechanisms. Since the upper and lower substrate transferpositions are close to each other, the indexer's transport mechanismmoves a reduced amount vertically. This improves the operatingefficiency of the indexer's transport mechanism.

The apparatus may further comprise a receiver provided between theindexer's transport mechanism and each end transport mechanism forreceiving the substrates, the indexer's transport mechanism transferringthe substrates through the receiver. The transfer of substrates throughthe receiver can improve the transporting efficiency over the case oftransferring the substrates directly between the transport mechanisms.

In yet another embodiment, a substrate treating apparatus comprises aplurality of treating blocks arranged horizontally, each includingtreating units arranged on each of upper and lower stories, and a maintransport mechanism provided for each of the stories for transportingsubstrates to the treating units on each of the stories; wherein aseries of treatments is performed for the substrates by transferring thesubstrates between the main transport mechanisms of the treating blocksadjacent each other on the same story.

According to this embodiment, substrates are transported to and from theplurality of treating blocks arranged horizontally, and in parallelthrough the different stories. A series of treatments are performed onthe substrates in parallel on the respective stories, each having theplurality of treating blocks. This realizes an increased throughput ofthe substrate treating apparatus. Since the treating blocks have alayered structure with a plurality of stories arranged vertically, anincrease in the installation area of the substrate treating apparatuscan be avoided.

In the embodiment noted above, each of the treating blocks may have ahousing for collectively accommodating the treating units and the maintransport mechanisms included in each of the treating blocks. Then, eachtreating block can be handled as a unit, thereby simplifying themanufacture and repair of the substrate treating apparatus.

Each of the treating blocks may further include a shielding platedisposed between the respective stories, gas supply openings forsupplying a clean gas into a transporting space of the main transportmechanism on each story, and gas exhaust openings for exhausting the gasfrom the transporting space of the main transport mechanism on eachstory. This construction can prevent any particles generated by eachmain transport mechanism from reaching the other story. The transportingspace on each story can also be kept clean.

In the above construction, the gas supply openings may be formed in ablowout unit, and the gas exhaust openings in an exhaust unit, at leastone of the gas blowout unit and the gas exhaust unit acting as theshielding plate. This simplifies the apparatus construction.

The gas supply openings of each transporting space may be arranged in aposition higher than the gas exhaust openings of the transporting space.Then, the air currents in each transporting space form a down-flow,which can keep the transporting space even cleaner.

The apparatus may further comprise an indexer's transport mechanism fortransporting the substrates to and from a cassette for storing aplurality of substrates, and for transporting the substrates to the maintransport mechanisms on the respective stories of an end one of thetreating blocks, wherein the indexer's transport mechanism transfers thesubstrates, in positions adjacent each other, to and from the maintransport mechanisms on the respective stories of the end one of thetreating blocks. This enables the indexer's transport mechanism toperform reduced amount of vertical movement, thereby improving theoperating efficiency of the indexer's transport mechanism.

The above construction may further comprise substrate receivers providedbetween the main transport mechanisms on the respective stories of theend one of the treating blocks and the indexer's transport mechanism,the indexer's transport mechanism transferring the substrates througheach of the receivers. This construction realizes an improvedtransporting efficiency compared to transferring the substrates directlybetween the transport mechanisms.

In a still another embodiment, a substrate treating apparatus comprisesan indexer section including an indexer's transport mechanism fortransporting substrates to and from a cassette for storing a pluralityof substrates; a coating block disposed adjacent the indexer section,and including coating units and heat-treating units arranged on each ofupper and lower stories for forming resist film on the substrates, and amain transport mechanism disposed on each story for transporting thesubstrates to and from the coating units and the heat-treating units onthe each story; a developing block disposed adjacent the coating block,and including developing units and heat-treating units arranged on eachof upper and lower stories for developing the substrates, and a maintransport mechanism disposed on each story for transporting thesubstrates to and from the developing units and the heat-treating unitson the each story; and an interface section disposed adjacent thedeveloping block, and including an interface's transport mechanism fortransporting the substrates to and from an exposing machine providedseparately from the apparatus; wherein the indexer's transport mechanismtransfers the substrates to and from the main transport mechanism oneach story of the coating block; the main transport mechanism on eachstory of the coating block transfers the substrates to and from the maintransport mechanism on the same story of the developing block; and theinterface's transport mechanism transfers the substrates to and from themain transport mechanism on each story of the developing block.

According to this embodiment, the indexer's transport mechanism takesthe substrates out of the cassette in order, and transfers thesesubstrates to the main transport mechanisms on the respective stories ofthe coating block. Each main transport mechanism of the coating blocktransports the substrates to the associated coating units andheat-treating units. Each treatment unit carries out a predeterminedtreatment of the substrates. The main transport mechanism on each storyof the coating block transfers the substrates having resist film formedthereon to the main transport mechanism on the same story of theadjoining developing block. Each main transport mechanism of thedeveloping block transfers the substrates to the interface's transportmechanism of the adjoining interface section. The interface's transportmechanism transfers the received substrates to the exposing machine,which is an external apparatus. The exposed substrates are returned tothe interface section again. The interface section's transport mechanismtransfers the substrates to the main transport mechanism on each storyof the developing block. Each main transport mechanism of the developingblock transports the substrates to the associated developing units andheat-treating units. Each treating unit carries out a predeterminedtreatment of the substrates. The main transport mechanism on each storyof the developing block transfers the developed substrates the maintransport mechanism on the same story of the adjoining coating block.The main transport mechanism on each story of the coating blocktransfers the substrates to the indexer's transport mechanism of theindexer section. The indexer's transport mechanism stores the substratesin a predetermined cassette. According to this construction, asdescribed above, the coating block and developing block carry out theresist film forming treatment and developing treatment in parallel oneach story. This construction, therefore, increases the treatingefficiency of the substrate treating apparatus. Since the coating blockand developing block have a layered structure with a plurality ofstories arranged vertically, an increase in the footprint can beavoided.

The apparatus may further comprise a controller for controlling theinterface's transport mechanism to transport the substrates to theexposing machine in an order in which the indexer's transport mechanismhas taken the substrates out of the cassette. This helps with trackingmultiple substrates within the apparatus.

The interface section may further include a plurality of buffers totemporarily store the substrates. The controller being arranged tocontrol the interface's transport mechanism, when the substrates aredelivered from the developing block in an order different from the orderin which the indexer's transport mechanism has taken the substrates outof the cassette, to receive the substrates and transport the substratesto the buffers. The substrates are transferred to the buffers in theevent that the substrates are delivered from the developing block in anorder different from the order in which the indexer's transportmechanism initially took the substrates out of the cassette. This allowsthe developing block to deliver succeeding substrates. Further, theorder of transporting the substrates from the interface section to theexposing machine may be adjusted to the order in which the indexer'stransport mechanism has taken the substrates out of the cassette. Thus,the substrates can be treated conveniently in a predetermined order.

The coating units for forming resist film on the substrates may includea resist film coating unit for applying a resist film material to thesubstrates, and an anti-reflection film coating unit for applying ananti-reflection film forming solution to the substrates.

This specification discloses several embodiments directed to thefollowing substrate treating apparatus:

(1) A substrate treating apparatus is provided wherein the series oftreatments carried out in each of the substrate treatment lines is thesame.

According to the embodiment defined in (1) above, the apparatusconstruction can be simplified.

(2) A substrate treating apparatus is provided wherein said treatingunits include solution treating units for treating the substrates with asolution, and heat-treating units for heat-treating the substrates.

(3) A substrate treating apparatus is provided in another embodimentwherein said treating units include solution treating units for treatingthe substrates with a solution, and heat-treating units forheat-treating the substrates.

According to the embodiment defined in (2) and (3) above, varioustreatments can be carried out for the substrates.

(4) A substrate treating apparatus is provided further comprising asingle, second gas supply pipe for supplying a clean gas to each of thetreating units associated with the respective main transport mechanismsarranged vertically.

According to the embodiment defined in (4) above, the installation areacan be reduced.

(5) A substrate treating apparatus is provided in which the maintransport mechanisms on the respective stories of each treating blockare arranged in the same position in plan view.

According to the embodiment defined in (5) above, the apparatusconstruction can be simplified.

(6) A substrate treating apparatus is provided in which the treatingunits arranged vertically of each treating block perform the sametreatment.

According to the embodiment defined in (6) above, the apparatusconstruction can be simplified.

(7) A substrate treating apparatus is provided further comprising asingle, second gas supply pipe for supplying a clean gas to the treatingunits arranged vertically.

According to the embodiment defined in (7) above, the installation areacan be reduced.

(8) A substrate treating apparatus is provided wherein the treatingunits on each story are stacked.

According to the embodiment defined in (8) above, the apparatusconstruction can be simplified.

BRIEF DESCRIPTION OF THE DRAWINGS

For the purpose of illustrating the invention, there are shown in thedrawings several forms which are presently preferred, it beingunderstood, however, that the invention is not limited to the precisearrangement and instrumentalities shown.

FIG. 1 is a plan view showing an outline of a substrate treatingapparatus according to an embodiment of the present invention;

FIG. 2 is a schematic side view showing an arrangement of treating unitsincluded in the substrate treating apparatus;

FIG. 3 is a schematic side view showing an arrangement of treating unitsincluded in the substrate treating apparatus;

FIG. 4 is a view in vertical section taken on line a-a of FIG. 1;

FIG. 5 is a view in vertical section taken on line b-b of FIG. 1;

FIG. 6 is a view in vertical section taken on line c-c of FIG. 1;

FIG. 7 is a view in vertical section taken on line d-d of FIG. 1;

FIG. 8A is a plan view of coating units;

FIG. 8B is a sectional view of a coating unit,

FIG. 9 is a perspective view of a main transport mechanism;

FIG. 10 is a control block diagram of the substrate treating apparatusaccording to an embodiment of the present invention;

FIG. 11 is a flow chart of a series of treatments of wafers W; and

FIG. 12 is a view schematically showing operations repeated by eachtransport mechanism.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

Embodiments of this invention will be described in detail hereinafterwith reference to the drawings.

FIG. 1 is a plan view showing an outline of a substrate treatingapparatus according to an embodiment of the present invention. FIGS. 2and 3 are schematic side views showing an arrangement of treating unitsincluded in the substrate treating apparatus. FIGS. 4 through 7 areviews in vertical section taken on lines a-a, b-b, c-c and d-d of FIG.1, respectively.

This embodiment provides a substrate treating apparatus for formingresist film on substrates (e.g. semiconductor wafers) W, and developingexposed wafers or substrates W. This apparatus is divided into anindexer section (hereinafter called “ID section”) 1, a treating section3, and an interface section (hereinafter called “IF section”) 5. The IDsection 1 and IF section 5 are arranged adjacent to and on the oppositesides of the treating section 3. An exposing machine EXP which is anexternal apparatus separate from this apparatus is disposed adjacent tothe IF section 5.

The ID section 1 takes wafers W out of each cassette C, which stores aplurality of wafers W, and deposits wafers W in the cassette C. The IDsection 1 has a cassette table 9 for receiving cassettes C and an ID'stransport mechanism T_(ID) for transporting wafers W to and from eachcassette C. The ID's transport mechanism T_(ID) corresponds to theindexer's transport mechanism in this embodiment.

The treating section 3 includes four main transport mechanisms T₁, T₂,T₃ and T₄. The treating section 3 is divided into a first to a fourthcells 11, 12, 13 and 14 associated with the respective main transportmechanisms T₁, T₂, T₃ and T₄. The first and third cells 11 and 13 areused for forming resist film on the wafers W. The second and fourthcells 12 and 14 are used for developing the wafers W. Each of the cells11-14 has a plurality of treating units (to be described hereinafter).The main transport mechanisms T₁, T₂, T₃ and T₄ transport the wafers Wto and from the treating units of the respective cells 11-14.

The first and second cells 11 and 12 juxtaposed horizontally areconnected to each other to form a substrate treatment line Lu extendingbetween the ID section 1 and IF section 5. The third and fourth cells 13and 14 juxtaposed horizontally are also connected to each other to forma substrate treatment line Ld extending between the ID section 1 and IFsection 5. These two substrate treatment lines Lu and Ld are arrangedone over the other. In other words, the treating section 3 has a layeredstructure with the plurality of substrate treatment lines Lu and Ldarranged vertically.

The substrate treatment lines Lu and Ld are arranged one over the otherto adjoin each other. That is, the first cell 11 is located over thethird cell 13, and the second cell 12 over the fourth cell 14.Therefore, the treating section 3 may be constructed easily byhorizontally arranging a treating block Ba having the first and thirdcells 11 and 13 formed integrally, and a treating block Bb having thesecond and fourth cells 12 and 14 formed integrally.

The IF section 5 transfers wafers W to and from the exposing machineEXP. The IF section 5 has IF's transport mechanisms T_(IF) fortransporting wafers W. The IF's transport mechanisms T_(IF) include afirst transport mechanism T_(IFA) and a second transport mechanismT_(IFB). The first transport mechanism T_(IFA) and second transportmechanism T_(IFB) correspond to the interface's transport mechanisms inthis embodiment.

The ID's transport mechanism T_(ID) transfers wafers W to and from themain transport mechanisms T₁ and T₃ of the first and third cells 11 and13 located adjacent the ID section 1. The main transport mechanismsT₁-T₄ of the cells 11-14 transfer wafers W to and from the other cellsconnected thereto on the same stories. The IF's transport mechanismsT_(IF) transfer wafers W to and from the main transport mechanisms T₂and T₄ of the second and fourth cells 12 and 14 located adjacent the IFsection 5. As a result, wafers W are transported between the ID section1 and IF section 5 in parallel through the two substrate treatment linesLu and Ld, to undergo a series of treatments in each of the substratetreatment lines Lu and Ld. The main transport mechanisms T₁ and T₃correspond to the end transport mechanisms in this embodiment.

This apparatus includes receivers PASS₁ and PASS₃ for transferringwafers W between the ID's transport mechanism T_(ID) and main transportmechanisms T₁ and T₃. Similarly, a receiver PASS₂ is provided fortransferring wafers W between the main transport mechanisms T₁ and T₂,and a receiver PASS₄ for transferring wafers W between the maintransport mechanisms T₃ and T₄. Further, receivers PASS₅ and PASS₆ areprovided for transferring wafers W between the main transport mechanismsT₂ and T₄ and IF's transport mechanisms T_(IF). Each of the receiversPASS₁-PASS₆ has a plurality of support pins projecting therefrom, forreceiving a wafer W in a substantially horizontal position on thesesupport pins.

[ID Section 1]

The ID section 1 will be described next. The cassette table 9 canreceive four cassettes C arranged in a row. The ID's transport mechanismT_(ID) has a movable base 21 for moving horizontally alongside thecassette table 9 in the direction of arrangement of the cassettes C, alift shaft 23 vertically extendible and contractible relative to themovable base 21, and a holding arm 25 swivelable on the lift shaft 23,and extendible and retractable radially of the swivel motion, forholding a wafer W. The ID's transport mechanism TID can transport wafersW between each cassette C and the receivers PASS₁ and PASS₃.

[First Cell 11]

A belt-like transporting space A1 for transporting wafers W extendsthrough the center of the first cell 11 and parallel to the direction ofarrangement of the first and second cells 11 and 12. The treating unitsof the first cell 11 are coating units 31 for applying a treatingsolution to the wafers W, and heat-treating units 41 for heat-treatingthe wafers W. The coating units 31 are arranged on one side of thetransporting space A₁, while the heat-treating units 41 are arranged onthe other side thereof.

The coating units 31 are arranged vertically and horizontally, eachfacing the transporting space A1. In this embodiment, four coating units31 in total are arranged in two columns and two rows. The coating units31 include anti-reflection film coating units BARC for forminganti-reflection film on the wafers W, and resist film coating unitsRESIST for forming resist film on the wafers W. The coating units 31correspond to the solution treating units in this embodiment.

Reference is made to FIGS. 8A and 8B. FIG. 8A is a plan view of thecoating units 31. FIG. 8B is a sectional view of a coating unit 31. Eachcoating unit 31 includes a spin holder 32 for holding and spinning awafer W, a cup 33 surrounding the wafer W, and a supply device 34 forsupplying a treating solution to the wafer W. The two sets of spinholders 32 and cups 33 at each level are juxtaposed with no partitionwall or the like in between. The supply device 34 includes a pluralityof nozzles 35, a gripper 36 for gripping one of the nozzles 35, and anozzle moving mechanism 37 for moving the gripper 36 to move one of thenozzles 35 between a treating position above the wafer W and a standbyposition away from above the wafer W. Each nozzle 35 has one end of atreating solution pipe 38 connected thereto. The treating solution pipe38 is arranged movable to permit movement of the nozzle 35 between thestandby position and treating position. The other end of each treatingsolution pipe 38 is connected to a treating solution source (not shown).Specifically, in the case of antireflection film coating units BARC, thetreating solution sources supply different types of treating solutionfor antireflection film to the respective nozzles 35. In the case ofresist film coating units RESIST, the treating solution sources supplydifferent types of resist film material to the respective nozzles 35.

The nozzle moving mechanism 37 has first guide rails 37 a and a secondguide rail 37 b. The first guide rails 37 a are arranged parallel toeach other and outwardly of the two cups 33 arranged sideways. Thesecond guide rail 37 b is slidably supported by the two first guiderails 37 a and disposed above the two cups 33. The gripper 36 isslidably supported by the second guide rail 37 b. The first guide rails37 a and second guide rail 37 b take guiding action substantiallyhorizontally and in directions substantially perpendicular to eachother. The nozzle moving mechanism 37 further includes drive members(not shown) for sliding the second guide rail 37 b, and sliding thegripper 36. The drive members are operable to move the nozzle 35 grippedby the gripper 36 to the treating positions above the two spin holders32.

Referring back to FIG. 1 and FIG. 3, the plurality of heat-treatingunits 41 are arranged vertically and horizontally, each facing thetransporting space A1. In this embodiment, three heat-treating units 41can be arranged horizontally, and five heat-treating units 41 can bestacked vertically. Each heat-treating unit 41 has a plate 43 forreceiving a wafer W. The heat-treating units 41 include cooling units CPfor cooling wafers W, heating and cooling units PHP for carrying outheating and cooling treatments continually, and adhesion units AHL forheat-treating wafers W in an atmosphere of hexamethyl silazane (HMDS)vapor in order to promote adhesion of coating film to the wafers W. Asshown in FIG. 5, each heating and cooling unit PHP has two plates 43,and a local transport mechanism (not shown) for moving a wafer W betweenthe two plates 43. The various types of heat-treating units CP, PHP andAHL are arranged in appropriate positions.

Reference is made to FIG. 9. FIG. 9 is a perspective view of the maintransport mechanism T₁. The main transport mechanism T₁ has two guiderails 51 for providing vertical guidance, and a guide rail 52 forproviding horizontal guidance. The vertical guide rails 51 are fixedopposite each other at one side of the transporting space A₁. In thisembodiment, the vertical guide rails 51 are arranged at the sideadjacent the coating units 31. The horizontal guide rail 52 is slidablyattached to the vertical guide rails 51. The horizontal guide rail 52has a base 53 slidably attached thereto. The base 53 extendstransversely, substantially to the center of the transporting space A₁.Further, drive members (not shown) are provided for vertically movingthe horizontal guide rail 52, and horizontally moving the base 53. Thedrive members are operable to move the base 53 to positions foraccessing the coating units 31 and heat-treating units 41 arrangedvertically and horizontally.

The base 53 has a turntable 55 rotatable about a vertical axis Q. Theturntable 55 has two holding arms 57 a and 57 b horizontally movablyattached thereto for holding wafers W, respectively. The two holdingarms 57 a and 57 b are arranged vertically close to each other. Further,drive members (not shown) are provided for rotating the turntable 55,and moving the holding arms 57 a and 57 b. The drive members areoperable to move the turntable 55 to positions opposed to the coatingunits 31, heat-treating units 41 and receivers PASS₁ and PASS₂, and toextend and retract the holding arms 57 a and 57 b to and from thecoating units 31 and so on.

[Third Cell 13]

The third cell 13 will be described next. Like reference numerals areused to identify like parts which are the same as in the first cell 11,and will not be described again. The layout in plan view of the maintransport mechanism T₃ and treating units in the third cell 13 issubstantially the same as in the first cell 11. It can be said,therefore, that the coating units 31 are vertically stacked over thedifferent stories of the first cell 11 and third cell 13. Similarly, itcan be said that the heat-treating units 41 also are vertically stackedover the different stories. The arrangement of the various treatingunits of the third cell 13 as seen from the main transport mechanism T₃is substantially the same as the arrangement of the various treatingunits of the first cell 11 as seen from the main transport mechanism T₁.

In the following description, when distinguishing the resist filmcoating units RESIST in the first and third cells 11 and 13, subscripts“1” and “3” will be affixed (for example, the resist film coating unitsRESIST in the first cell 11 will be referred to as “resist film coatingunits RESIST₁”).

[First Cell 11 and Third Cell 13]

Reference is made to FIG. 4. Constructions relevant to the first cell 11and third cell 13 will be described collectively. The receiver PASS₁ isdisposed between the ID section 1 and first cell 11. The receiver PASS₃is disposed between the ID section 1 and third cell 13. The receiversPASS₁ and PASS₃ are arranged in plan view at the ends of thetransporting spaces A₁ and A₃ adjacent the ID section 1, respectively.Seen in a sectional view, the receiver PASS₁ is disposed at a heightadjacent a lower part of the main transport mechanism T₁, while thereceiver PASS₃ is disposed at a height adjacent an upper part of themain transport mechanism T₃. Therefore, the positions of receiver PASS₁and receiver PASS₃ are close to each other for allowing the ID'stransport mechanism T_(ID) to access the receiver PASS₁ and receiverPASS₃ using only a small amount of vertical movement.

Each of the receiver PASS₁ and receiver PASS₃ includes a plurality of(two) receivers arranged one over the other. Of the two receivers PASS₁,one PASS_(1A) serves to pass wafers W from the ID's transport mechanismT_(ID) to the main transport mechanism T₁, and the wafers W aredeposited on the receiver PASS_(1A) solely by the ID's transportmechanism T_(ID). The other receiver PASS_(1B) serves to pass wafers Wfrom the main transport mechanism T₁ to the ID's transport mechanismT_(ID), and the wafers W are deposited on the receiver PASS_(1B) solelyby the main transport mechanism T₁. Each of the receivers PASS₂, PASS₄,PASS₅ and PASS₆ described hereinafter similarly includes two receiversused for transferring wafers W in opposite directions.

The receiver PASS₂ is disposed between the first cell 11 and second cell12. The receiver PASS₄ is disposed between the third cell 13 and fourthcell 14. The receivers PASS₂ and PASS₄ are arranged in the same positionin plan view. Buffers for temporarily storing wafers W and heat-treatingunits for heat-treating wafers W (neither being shown) are arranged inappropriate positions above and below the receivers PASS₂ and PASS₄.

Each of the transporting spaces A₁ and A₃ has a first blowout unit 61for blowing out a clean gas, and an exhaust unit 62 for sucking the gas.Each of the first blowout unit 61 and exhaust unit 62 is in the form ofa flat box having substantially the same area as the transporting spaceA₁ in plan view. Each of the first blowout unit 61 and exhaust unit 62has first blowout openings 61 a or exhaust openings 62 a formed in onesurface thereof. In this embodiment, the first blowout openings 61 a orexhaust openings 62 a are in the form of numerous small bores f. Thefirst blowout units 61 are arranged over the transporting spaces A₁ andA₃ with the first blowout openings 61 a directed downward. The exhaustunits 62 are arranged under the transporting spaces A₁ and A₃ with theexhaust openings 62 a directed upward. The atmosphere in thetransporting space A₁ and the atmosphere in the transporting space A₃are blocked off by the exhaust unit 62 of the transporting space A₁ andthe first blowout unit 61 of the transporting space A₃. The firstblowout openings 61 a correspond to the gas supply ports in thisembodiment. The exhaust openings 62 a correspond to the gas exhaustports in this embodiment. The first blowout units 61 correspond to theblowout units in this embodiment.

Referring to FIG. 5, the first blowout units 61 of the transportingspaces A₁ and A₃ are connected to a common, first gas supply pipe 63.The first gas supply pipe 63 extends laterally of the receivers PASS₂and PASS₄ from an upper position of the transporting space A₁ to a lowerposition of the transporting space A₃, and is bent below thetransporting space A₃ to extend horizontally. The other end of the firstgas supply pipe 63 is connected to a gas source not shown. Similarly,the exhaust units 62 of the transporting spaces A₁ and A₃ are connectedto a common, first gas exhaust pipe 64. The first gas exhaust pipe 64extends laterally of the receivers PASS₂ and PASS₄ from a lower positionof the transporting space A₁ to a lower position of the transportingspace A₃, and is bent below the transporting space A₃ to extendhorizontally. As the gas is blown out of each first blowout opening 61 aand sucked and exhausted through each exhaust opening 62 a of thetransporting spaces A₁ and A₃, gas currents are formed to flow from topto bottom of the transporting spaces A₁ and A₃, thereby keeping each ofthe transporting spaces A₁ and A₃ in a clean state.

Each coating unit 31 of the first and third cells 11 and 13 has a pitportion PS extending vertically. The pit portion PS accommodates asecond gas supply pipe 65 extending vertically for supplying the cleangas, and a second gas exhaust pipe 66 extending vertically forexhausting the gas. Each of the second gas supply pipe 65 and second gasexhaust pipe 66 branches at a predetermined height in each coating unit31 to extend substantially horizontally from the pit portion PS. Aplurality of branches of the second gas supply pipe 65 are connected tosecond blowout units 67 for blowing out the gas downward. A plurality ofbranches of the second gas exhaust pipe 66 are connected forcommunication to the bottoms of the respective cups 33. The other end ofthe second gas supply pipe 65 is connected to the first gas supply pipe63 below the third cell 13. The other end of the second gas exhaust pipe66 is connected to the first gas exhaust pipe 64 below the third cell13. As the gas is blown out of the second blowout units 67 and exhaustedthrough the second exhaust pipes 62 a, the atmosphere inside each cup 33is constantly maintained clean, thereby allowing for excellent treatmentof the wafer W held by the spin holder 32.

The pit portions PS further accommodate piping of the treatingsolutions, electric wiring and the like (not shown). Thus, with the pitportions PS accommodating the piping and electric wiring provided forthe coating units 31 of the first and third cells 11 and 13, the pipingand electric wiring can be reduced in length.

The main transport mechanisms T₁ and T₃ and treating units of the firstcell 11 and third cell 13 are mounted in one housing 75. (See FIG. 4).This housing 75 defines one treating block Ba. The treating block Baintegrating the first cell 11 and third cell 13 corresponds to thecoating block in this embodiment. Similarly, the main transportmechanisms T₂ and T₄ and treating units of the second cell 12 and fourthcell 14 described hereinafter are mounted in a different housing 75.This housing 75 defines another treating block Bb. The treating block Bbintegrating the second cell 12 and fourth cell 14 corresponds to thedeveloping block in this embodiment. Thus, with the housings 75 definingthe treating blocks Ba and Bb integrating the cells arranged vertically,the treating section 3 may be manufactured and assembled simply.

[Second Cell 12]

The second cell 12 will be described next. Like reference numerals areused to identify like parts which are the same as in the first cell 11and will not be described again. The second cell 12 has a transportingspace A₂ formed as an extension of the transporting space A₁.

The treating units of the second cell 12 are developing units DEV fordeveloping wafers W, heat-treating units 42 for heat-treating the wafersW, and an edge exposing unit EEW for exposing peripheral regions of thewafers W. The developing units DEV are arranged at one side of thetransporting space A₂, and the heat-treating units 42 and edge exposingunit EEW are arranged at the other side of the transporting space A₂.Preferably, the developing units DEV are arranged at the same side asthe coating units 31. It is also preferable that the heat-treating units42 and edge exposing unit EEW are arranged in the same row as theheat-treating units 41.

In one embodiment, the number of developing units DEV is four, and setsof two units DEV arranged horizontally along the transporting space A₂are stacked one over the other. Each developing unit DEV includes a spinholder 77 for holding and spinning a wafer W, and a cup 79 surroundingthe wafer W. The two developing units DEV arranged at the lower levelare not separated from each other by a partition wall or the like. Asupply device 81 is provided for supplying developers to the twodeveloping units DEV. The supply device 81 includes two slit nozzles 81a having a slit or a row of small bores for delivering the developers.The slit or row of small bores, preferably, has a length correspondingto the diameter of wafer W. Preferably, the two slit nozzles 81 a arearranged to deliver developers of different types or concentrations. Thesupply device 81 further includes a moving mechanism 81 b for movingeach slit nozzle 81 a. Thus, the slit nozzles 81 a are movable,respectively, over the two spin holders 77 juxtaposed sideways.

The plurality of heat-treating units 42 are arranged sideways along thetransporting space A₂, and stacked one over the other. Eachheat-treating unit 42 includes a heating unit HP for heating wafers Wand a cooling unit CP for cooling wafers W.

The single edge exposing unit EEW is disposed in a predeterminedposition. The edge exposing unit EEW includes a spin holder (not shown)for holding and spinning a wafer W, and a light emitter (not shown) forexposing edges of the wafer W held by the spin holder.

The receiver PASS₅ and heating and cooling units PHP are stacked in aposition facing the transporting space A₂ and adjacent the IF section 5.The stack of receiver PASS₅ and heating and cooling units PHP has oneside thereof located adjacent one of the heat-treating units 42, and isaligned with the heat-treating units 42. As distinct from theheat-treating units 42 of the second cell 12, the heating and coolingunits PHP rely on the IF's transport mechanism TIF for transport ofwafers W. In terms of layout, the heating and cooling units PHP aremounted in the same housing 75 as the second and fourth cells 12 and 14.These heating and cooling units PHP and receiver PASS₅ are constructedfor allowing wafers W to be loaded and unloaded through the frontthereof opposed to the transporting space A₂ and the side opposed to theIF section 5.

The main transport mechanism T₂ is disposed substantially centrally ofthe transporting space A₂ in plan view. The main transport mechanism T₂has the same construction as the main transport mechanism T₁. The maintransport mechanism T₂ transports wafers W to and from the receiverPASS₂, various heat-treating units 42, edge exposing unit EEW andreceiver PASS₅.

[Fourth Cell 14]

Like reference numerals are used to identify like parts which are thesame as in the first and second cells 11 and 12, and will not bedescribed again. The layout in plan view of the main transport mechanismT₄ and treating units in the fourth cell 14 is substantially the same asthat of the second cell 12. The arrangement of the various treatingunits of the fourth cell 14 as seen from the main transport mechanism T₄is substantially the same as the arrangement of the various treatingunits of the second cell 12 as seen from the main transport mechanismT₂. Thus, the developing units DEV of the second cell 12 and fourth cell14 are stacked vertically. Similarly, the heat-treating units 42 of thesecond cell 12 and fourth cell 14 are stacked vertically.

[Second Cell 12 and Fourth Cell 14]

Constructions relevant to the second cell 12 and fourth cell 14 also aresubstantially the same as the constructions relevant to the first cell11 and third cell 13, and will be described briefly. Each of thetransporting spaces A₂ and A₄ of the second and fourth cells 12 and 14also has constructions corresponding to the first blowout unit 61 andexhaust unit 62. Each developing unit DEV of the second and fourth cells12 and 14 also has constructions corresponding to the second blowoutunit 67 and second gas exhaust pipe 66.

In the following description, when distinguishing the developing unitsDEV, edge exposing units EEW, and so on in the second and fourth cells12 and 14, subscripts “2” and “4” will be affixed (for example, theheating units HP in the second cell 12 will be referred to as “heatingunits HP2”).

[IF Section 5, etc.]

Reference is now made to FIG. 1 and FIG. 7. The first transportmechanism T_(IFA) and second transport mechanism TIFB are arranged in adirection perpendicular to the arrangement of cells 11 and 12 (13 and14). The first transport mechanism T_(IFA) is disposed at the side wherethe heat-treating units 42 and so on of the second and fourth cells 12and 14 are located. The second transport mechanism T_(IFB) is disposedat the side where the developing units DEV of the second fourth cells 12and 14 are located. Stacked in multiples stages between the first andsecond transport mechanisms T_(IFA) and T_(IFB) are a receiver PASS-CPfor receiving and cooling wafers W, a receiver PASS₇ for receivingwafers W, and buffers BF for temporarily storing wafers W.

The first transport mechanism T_(IFA) includes a fixed base 83, liftshafts 85 vertically extendible and contractible relative to the base83, and a holding arm 87 swivelable on the lift shafts 85, andextendible and retractable radially of the swivel motion, for holding awafer W. The first transport mechanism TIFA transports wafers W betweenthe heating and cooling units (PHP₂, PHP₄), receivers (PASS₅, PASS₆,PASS-CP) and buffers BF. The second transport mechanism T_(IFB) also hasa base 83, lift shafts 85 and a holding arm 87 for transporting wafers Wbetween the receivers (PASS-CP, PASS₇) and exposing machine EXP.

A control system of this apparatus will be described next. FIG. 10 is acontrol block diagram of the substrate treating apparatus according tothe embodiment. As shown, this apparatus includes a main controller 91and a first to a sixth controllers 93, 94, 95, 96, 97 and 98.

The first controller 93 controls substrate transport by the ID'stransport mechanism T_(ID). The second controller 94 controls substratetransport by the main transport mechanism T₁, and substrate treatment inthe resist film coating units RESIST₁, antireflection film coating unitsBARC₁, cooling units CP₁, heating and cooling units PHP₁ and adhesionunits AHL₁. The third controller 95 controls substrate transport by themain transport mechanism T₂, and substrate treatment in the edgeexposing unit EEW₂, developing units DEV₂, heating units HP₂ and coolingunits CP₂. The controls by the fourth and fifth controllers 96 and 97correspond to those by the second and third controllers 94 and 95,respectively. The sixth controller 98 controls substrate transport bythe first and second transport mechanisms T_(IFA) and T_(IFB), andsubstrate treatment in the heating and cooling units PHP₂ and PHP₄. Thefirst to sixth controllers 93-98 carry out the controls independently ofone another.

The main controller 91 performs overall control of the first to sixthcontrollers 93-98. Specifically, the main controller 91 controlscoordination among the transport mechanisms. For example, the maincontroller 91 adjusts the timing of the respective transport mechanismsmaking access to the receivers PASS₁-PASS₆. The main controller 91 alsocontrols wafers W to be transported to the exposing machine EXP in theorder in which the wafers W are fetched from the cassettes C.

Each of the main controller 91 and the first to sixth controllers 93-98is realized by a central processing unit (CPU) which performs variousprocesses, a RAM (Random Access Memory) used as the workspace foroperation processes, and a storage medium such as a fixed disk forstoring a variety of information including a predetermined processingrecipe (processing program). The main controller 91 and the first tosixth controllers 93-98 correspond to the controller in this embodiment.

Next, operation of the substrate treating apparatus in this embodimentwill be described. FIG. 11 is a flow chart of a series of treatments ofwafers W, indicating the treating units and receivers to which thewafers W are transported in order. FIG. 12 is a view schematicallyshowing operations repeated by each transport mechanism, and specifyingan order of treating units, receivers and cassettes accessed by thetransport mechanisms. The following description will be made separatelyfor each transport mechanism.

[ID's Transport Mechanism T_(ID)]

The ID's transport mechanism T_(ID) moves to a position opposed to oneof the cassettes C, holds with the holding arm 25 a wafer W to betreated and takes the wafer W out of the cassette C. The ID's transportmechanism T_(ID) swivels the holding arm 25, vertically moves the liftshaft 23, moves to a position opposed to the receiver PASS₁, and placesthe wafer W on the receiver PASS_(1A) (which corresponds to step S1 a inFIG. 11; only step numbers will be indicated hereinafter). At this time,a wafer W usually is present on the receiver PASS_(1B), and the ID'stransport mechanism T_(ID) receives this wafer W and stores it in acassette C (step S23). When there is no wafer W on the receiverPASS_(1B), the ID's transport mechanism T_(ID) just accesses thecassette C. Then, the ID's transport mechanism T_(ID) transports a waferW from the cassette C to the receiver PASS_(3A) (step S1 b). Here again,if a wafer W is present on the receiver PASS_(3B), the ID's transportmechanism T_(ID) will store this wafer W in a cassette C (step S23).

The ID's transport mechanism T_(ID) repeats the above operation. Thisoperation is controlled by the first controller 93. As a result, thewafers W taken out one at a time from the cassette C are transportedalternately to the first cell 11 and third cell 13.

[Main Transport Mechanisms T₁, T₃]

Since operation of the main transport mechanism T₃ is substantially thesame as operation of the main transport mechanism T₁, only the maintransport mechanism T₁ will be described. The main transport mechanismT₁ moves to a position opposed to the receiver PASS₁. At this time, themain transport mechanism T₁ holds, on one holding arm 57 (e.g. 57 b), awafer W received immediately before from the receiver PASS_(2B). Themain transport mechanism T1 places this wafer W on the receiverPASS_(1B) (step S22), and holds the wafer W present on the receiverPASS_(1A) with the other holding arm 57 (e.g. 57 a).

The main transport mechanism T₁ accesses a predetermined one of thecooling units CP₁. There is a different wafer W having already receiveda predetermined heat treatment (cooling) in the cooling unit CP₁. Themain transport mechanism T₁ holds the different wafer W with theunloaded holding arm 57 (holding no wafer W), takes it out of thecooling unit CP₁, and loads into the cooling unit CP₁ the wafer W havingreceived from the receiver PASS_(1A). Then, the main transport mechanismT₁, holding the cooled wafer W, moves to one of the antireflection filmcoating units BARC₁. The cooling unit CP₁ starts heat treatment(cooling) of the wafer W loaded therein (step S2). It is assumed that,when the main transport mechanism T₁ subsequently accesses the differentheat-treating units 41 and coating units 31, wafers W having receivedpredetermined treatments are present in these treating units (31 and41).

Accessing the antireflection film coating unit BARC₁, the main transportmechanism T₁ takes a wafer W having antireflection film formed thereonfrom the antireflection film coating unit BARC₁, and places the cooledwafer W on the spin holder 32 of the antireflection film coating unitBARC₁. Then, the main transport mechanism T₁, holding the wafer W havingantireflection film formed thereon, moves to one of the heating andcooling units PHP₁. The antireflection film coating unit BARC₁ startstreatment of the wafer W placed on the spin holder 32 (step S3).

Specifically, the spin holder 32 spins the wafer W in horizontalposture, the gripper 26 grips one of the nozzles 35, the nozzle movingmechanism 37 moves the gripped nozzle 35 to a position above the waferW, and the treating solution for antireflection films is supplied fromthe nozzle 35 to the wafer W. The treating solution supplied spreads allover the wafer W, and is scattered away from the wafer W. The cup 33collects the scattering treating solution. In this way, the treatment iscarried out for forming antireflection film on the wafer W.

Accessing the heating and cooling unit PHP₁, the main transportmechanism T₁ takes a wafer W having received heat treatment out of theheating and cooling unit PHP₁, and loads the wafer W havingantireflection film formed thereon into the heating and cooling unitPHP₁. Then, the main transport mechanism T₁, holding the wafer W takenout of the heating and cooling unit PHP₁, moves to one of the coolingunits CP₁. The heating and cooling unit PHP₁ receives a wafer Wsuccessively on the two plates 43, to heat the wafer W on one of theplates 43 and then to cool the wafer W on the other plate 43 (step S4).

Having moved to the cooling unit CP₁, the main transport mechanism T₁takes a wafer W out of the cooling unit CP₁, and loads the wafer W heldby the transport mechanism T₁ into the cooling unit CP₁. The coolingunit CP₁ cools the wafer W loaded therein (step S5).

Then, the main transport mechanism T₁ moves to one of the resist filmcoating units RESIST₁. The main transport mechanism T₁ takes a wafer Whaving resist film formed thereon from the resist film coating unitRESIST₁, and loads the wafer W held by the main transport mechanism T₁into the resist film coating unit RESIST₁. The resist film coating unitRESIST₁ supplies the resist film material while spinning the wafer Wloaded therein, to form resist film on the wafer W (step S6).

The main transport mechanism T₁ further moves to one of the heating andcooling units PHP₁ and one of the cooling units CP₁. The main transportmechanism T₁ loads the wafer W having resist film formed thereon intothe heating and cooling unit PHP₁, transfers a wafer W treated in theheating and cooling unit PHP₁ to the cooling unit CP₁, and receives awafer W treated in the cooling unit CP₁. The heating and cooling unitPHP₁ and cooling unit CP₁ carry out predetermined treatments of newlyloaded wafers W, respectively (steps S7 and S8).

The main transport mechanism T₁ moves to the receiver PASS₂, places thewafer W it is holding on the receiver PASS_(2A) (step S9), and receivesa wafer W present on the receiver PASS_(2B) (step S21).

Subsequently, the main transport mechanism T₁ accesses the receiverPASS₁ again, and repeats the above operation. This operation iscontrolled by the second controller 94. Having received a wafer W fromthe receiver PASS₁, the main transport mechanism T₁ transports thiswafer W to a predetermined treating unit (a cooling unit CP₁ in thisembodiment), and takes a treated wafer W from this treating unit.Subsequently, the main transport mechanism T₁ moves to a plurality oftreating units in order, and transfers wafers W treated in therespective treating units to other treating units. Whenever a treatedwafer W is replaced by a wafer W to be treated, each treating unit (31,41) starts the predetermined treatment. Thus, predetermined treatmentsare carried out in parallel for a plurality of wafers W in therespective treating units. A series of treating steps is successivelyperformed for a plurality of wafers W. In these circumstances, thesecond controller 94 controls periods of the series of treating steps tobe uniform. Further, it is preferred to control the timing oftransporting wafers W to each treating unit (31, 41) and a schedule oftreatment carried out in each treating unit (31, 41) to be uniformbetween the wafers W. As a result, the series of treatments is completedin order, starting with a wafer W first placed on the receiver PASS₁.The wafers W are forwarded to the receiver PASS₂ in the order in whichthey are placed on the receiver PASS₁. Similarly, the main transportmechanism T₁ places the wafers W on the receiver PASS₁ in the order ofreceipt from the receiver PASS₂.

[Main Transport Mechanisms T₂, T₄]

Since operation of the main transport mechanism T₄ is substantially thesame as operation of the main transport mechanism T₂, only the maintransport mechanism T₂ will be described. The main transport mechanismT₂ moves to a position opposed to the receiver PASS₂. At this time, themain transport mechanism T₂ holds a wafer W received from a cooling unitCP₂ accessed immediately before. The main transport mechanism T₂ placesthis wafer W on the receiver PASS_(2B) (step S21), and holds the wafer Wpresent on the receiver PASS_(2A) (step S9).

The main transport mechanism T₂ accesses the edge exposing unit EEW₂.The main transport mechanism T₂ receives a wafer W having received apredetermined treatment in the edge exposing unit EEW₂, and loads thecooled wafer W into the edge exposing unit EEW₂. While spinning thewafer W loaded therein, the edge exposing unit EEW₂ irradiatesperipheral regions of the wafer W with light from the light emitter notshown, thereby exposing the peripheral regions of the wafer W (stepS10).

The main transport mechanism T₂, holding the wafer W received from theedge exposing unit EEW₂, accesses the receiver PASS₅. The main transportmechanism T₂ places the wafer W on the receiver PASS_(5A) (step S11),and holds a wafer W present on the receiver PASS_(5B) (step S16).

The main transport mechanism T₂ moves to one of the cooling units CP₂,and replaces a wafer W in the cooling unit CP₂ with the wafer W held bythe main transport mechanism T₂. The main transport mechanism T₂ holdsthe wafer W having received cooling treatment, and accesses one of thedeveloping units DEV₂. The cooling unit CP₂ starts treatment of thenewly loaded wafer W (step S17).

The main transport mechanism T₂ takes a developed wafer W from thedeveloping unit DEV₂, and places the cooled wafer W on the spin holder77 of the developing unit DEV₂. The developing unit DEV₂ develops thewafer W placed on the spin holder 77 (step S18). Specifically, while thespin holder 77 spins the wafer W in horizontal posture, the developer issupplied from one of the slit nozzles 81 a to the wafer W, therebydeveloping the wafer W.

The main transport mechanism T₂ holds the developed wafer W, andaccesses one of the heating units HP₂. The main transport mechanism T₂takes a wafer W out of the heating unit HP₂, and loads the wafer W it isholding into the heating unit HP₂. Then, the main transport mechanism T₂transports the wafer W taken out of the heating unit HP₂ to one of thecooling units CP₂, and takes out a wafer W already treated in thiscooling unit CP₂. The heating unit HP₂ and cooling unit CP₂ carry outpredetermined treatments for the newly loaded wafers W, respectively(steps S19 and S20).

Subsequently, the main transport mechanism T₂ accesses the receiverPASS₂ again, and repeats the above operation. This operation iscontrolled by the third controller 95. As a result, the wafers W areforwarded to the receiver PASS_(5B) in the order in which they areplaced on the receiver PASS_(2A). Similarly, the wafers W are forwardedto the receiver PASS_(SB) in the order in which they are placed on thereceiver PASS_(5B).

[IF's Transport Mechanisms T_(IF)—First Transport Mechanism T_(IFA)]

The first transport mechanism T_(IFA) accesses the receiver PAS S₅, andreceives the wafer W present on the receiver PASS_(5A) (step S11 a). Thefirst transport mechanism T_(IFA), holding the wafer W received, movesto the receiver PASS-CP, and loads the wafer W on the receiver PASS-CP(step S12).

Next, the first transport mechanism T_(IFA) receives a wafer W from thereceiver PASS₇ (step S14), and moves to a position opposed to one of theheating and cooling units PHP₂. The first transport mechanism T_(IFA)takes a wafer W having received heat treatment (PEB: Post Exposure Bake)from the heating and cooling unit PHP₂, and loads the wafer W receivedfrom the receiver PASS7 into the heating and cooling unit PHP₂. Theheating and cooling unit PHP₂ carries out heat treatment for the newlyloaded wafer W (step S15).

The first transport mechanism T_(IFA) transports the wafer W taken outof the heating and cooling unit PHP₂ to the receiver PASS_(5B).Subsequently, the first transport mechanism T_(IFA) transports a wafer Wfrom the receiver PASS_(6A) to the receiver PASS-CP (Step S11 b, 12).Next, the first transport mechanism T_(IFA) transports a wafer W fromthe receiver PASS₇ to one of the heating and cooling units PHP₄. At thistime, the first transport mechanism T_(IFA) takes out a wafer W havingbeen treated in the heating and cooling unit PHP₄, and places the waferW on the receiver PASS_(6B).

Subsequently, the first transport mechanism T_(IFA) accesses thereceiver PASS₅ again and repeats the above operation. This operation iscontrolled by the sixth controller 98. By transporting wafers Walternately from the receivers PASS₅ and PASS₆ to the receiver PASS-CP,the wafers W are placed on the receiver PASS-CP in the order in whichthe ID's transport mechanism TID has taken them out of the cassette C.

However, the controls of transport to and from the treating units by themain transport mechanisms T and treatment in the treating units arecarried out independently for each of the cells 11-14. That is, noadjustment is made to the timing of feeding wafers W to each of thereceiver PASS₅ and receiver PASS₆. Therefore, the order of feedingwafers W to the receiver PASS₅ and receiver PASS₆ may not agree with theorder in which they are taken out of the cassette C due to a fault suchas a delay in substrate treatment or transportation. In such a case, thesixth controller 98 operates the first transport mechanism T_(IFA) asfollows.

When wafers W fail to be fed to either one of the receiver PASS_(5A) andreceiver PASS_(6A), and wafers W are placed on the other receiver, thewafers W placed on the other receiver is transported to the buffers BFinstead of the receiver PASS-CP. When wafers W begin to be placed againon the receiver for which the feeding has been disrupted, the wafers Ware transported from the receiver now restored to service to thereceiver PASS-CP, and also from the buffers BF to the receiver PASS-CP.At this time, the wafers W are transported alternately from the restoredreceiver and buffers BF to the receiver PASS-CP. As a result, even whenthe order of feeding wafers W to the receiver PASS₅ and receiver PASS₆disagrees with the order in which they are taken out of the cassette C,the order of wafers W transported to the receiver PASS-CP is inagreement with the order of wafers W taken out of the cassette C.

[IF's Transport Mechanisms T_(IF)—Second Transport Mechanism T_(IFB)]

The second transport mechanism T_(IFB) takes a wafer W out of thereceiver PASS-CP, and transports it to the exposing machine EXP. Then,the second transport mechanism T_(IFB) receives an exposed wafer W fromthe exposing machine EXP, and transports it to the receiver PASS₇.

Subsequently, the second transport mechanism T_(IFB) accesses thereceiver PASS-CP again and repeats the above operation. This operationalso is controlled by the sixth controller 98. As described above, thefirst and second transport mechanisms T_(IFA) and T_(IFB) cooperate tofeed wafers W to the exposing machine EXP in the order in which they aretaken out of the cassette C.

The substrate treating apparatus according to this embodiment has twosubstrate treatment lines Lu and Ld arranged one over the other. Thisconstruction can substantially double the processing capabilities in thetreatment for forming antireflection film and resist film and in thetreatment for developing wafers W. Therefore, the throughput of thesubstrate treating apparatus is improved drastically.

Each of the substrate treatment lines Lu and Ld includes the maintransport mechanisms T arranged in one row. This arrangement can inhibitan increase in the installation area of the treating section 3.

The arrangements of the main transport mechanisms T₁ and T₃ (T₂ and T₄)and treating units in the two, upper and lower, substrate treatmentlines Lu (Ld) are substantially the same in plan view, which cansimplify the construction of the apparatus.

The construction of the apparatus may be simplified by providing thesame type of treating units for the two, upper and lower, substratetreatment lines Lu and Ld to perform the same series of treatments.

The treating units of the upper and lower cells 11 and 13 (12, 14) arestacked together. This arrangement can simplify the construction oftreating blocks Ba and Bb each including two, upper and lower cells.

Each of the treating blocks Ba and Bb has a housing 75 whichcollectively supports the two, upper and lower, main transportmechanisms T and the plurality of treating units. This allows thesubstrate treating apparatus to be manufactured efficiently and to bemaintained and repaired easily.

Each of the transporting spaces A₁-A₄ has the first blowout openings 61a and discharge openings 62 a, which can keep each transporting space Aclean.

The first blowout openings 61 a are arranged over each transportingspace A, and the discharge openings 62 a under each transporting spaceA, to produce substantially vertical, downward gas currents in thetransporting space A. This prevents the temperature environment oftransporting spaces A, coating units 31 and developing units DEV frombeing influenced by the heat from the heat-treating units 41.

The exhaust unit 62 provided in the transporting space A₁ (A₂) and thefirst blowout unit 61 provided in the transporting space A₃ (A₄) blockoff the atmospheres of each of the transporting spaces A₁ and A₃ (A₂ andA₄). Thus, each transporting space A can be maintained clean. Theapparatus construction is simplified since no special or additionalcomponent is required for blocking off atmosphere.

The first gas supply pipe 61 is provided as a component common to thefirst blowout units 61 of the upper and lower transporting spaces A₁ andA₃. This reduces piping installation space and simplifies the apparatusconstruction.

The receivers PASS₁ and PASS₃ are provided for transferring wafers Wbetween the ID's transport mechanism T_(ID) and main transportmechanisms T₁ and T₃, which can prevent lowering of the transportingefficiency of the ID's transport mechanism T_(ID) and main transportmechanisms T₁ and T₃. Similarly, the transporting efficiency of eachtransport mechanism is prevented from lowering by transferring wafers Wbetween the transport mechanisms through the receivers PASS.

Since the receiver PASS₁ and receiver PASS₃ are locate close to eachother, the ID's transport mechanism T_(ID) can access the receiver PASS₁and receiver PASS₃ through a reduced amount of vertical movement.

The main controller 91 and the first to sixth controllers 93-98 areprovided to control movement of wafers W to bring into agreement theorder of fetching from a cassette C and the order of feeding to theexposing machine EXP. This enables supervision or follow-up check ofeach wafer W without providing a construction for identifying the wafersW.

The common, second gas supply pipe 65 is provided for the coating units31 (developing units DEV) in the upper and lower cells 11 and 13 (12 and14). This reduces piping installation space and simplifies the apparatusconstruction.

This invention is not limited to the foregoing embodiment, but may bemodified as follows:

(1) The foregoing embodiment provides two substrate treatment lines Luand Ld, but the invention not limited to this. The construction may bemodified to include three or more substrate treatment lines verticallyarranged in multiple stages.

(2) In the foregoing embodiment, each substrate treatment line Lu (Ld)has two cells 11 and 12 (13 and 14) connected to each other. Theinvention is not limited to this. Each substrate treatment line may havethree or more cells.

(3) In the foregoing embodiment, the substrate treatment lines Lu and Ldcarry out the treatment for forming resist film and antireflection filmon the wafers W, and the treatment for developing exposed wafers W. Thesubstrate treatment lines may be modified to perform other treatmentsuch as cleaning of the wafers W. Accordingly, the type, number and thelike of treating units are selected or designed as appropriate. Further,the substrate treating apparatus may be constructed to exclude the IFsection 5.

(4) In the foregoing embodiment, the two substrate treatment lines Luand Ld perform the same series of treatments. Instead, the substratetreatment lines Lu and Ld may be modified to perform differenttreatments.

(5) In the foregoing embodiment, the two substrate treatment lines Luand LD have substantially the same plane layout. Instead, each of thesubstrate treatment lines Lu and Ld (i.e. upper and lower cells) mayhave the main transport mechanisms T and treating units arrangeddifferently.

(6) In the foregoing embodiment, the upper and lower cells 11 and 13 (12and 14) have the same arrangement of treating units as seen from themain transport mechanisms T. Instead, the upper and lower cells may havedifferent arrangements of treating cells.

(7) In the foregoing embodiment, each of the cells 11-14 has thetreating units arranged at opposite sides of the transporting space A.Instead, the treating units may be arranged at only one side.

(8) In the foregoing embodiment, wafers W are transferred between thetransport mechanisms through the receivers PASS. Instead, the wafers Wmay be transferred directly between the transport mechanisms, forexample.

(9) The foregoing embodiment may be modified to include buffers BF andcooling units CP arranged over and/or under the receivers PASS₁, PASS₂,PASS₃ and PASS₄. This construction allows the wafers W to be storedtemporarily or cooled as appropriate.

(10) In the foregoing embodiment, the IF transport mechanisms TIFinclude two transport mechanisms TIFA and TIFB. The IF section may bemodified to include one transport mechanism or three or more transportmechanisms.

(11) The foregoing embodiment provides no partition or the like betweenthe antireflection film coating unit BARC and resist film coating unitRESIST, but allows the atmosphere to be shared between these coatingunits. Instead, the atmospheres of the two units may be blocked off asappropriate.

(12) In the foregoing embodiment, one first blowout unit 61 and oneexhaust unit 62 are constructed to block off the atmosphere of each ofthe transporting spaces A₁ and A₃ (A₂ and A₄). The invention is notlimited to this. For example, only one of the first blowout unit 61 andexhaust unit 62 may block off atmosphere. Alternatively, a shieldingplate may be provided separately from the first blowout unit 61 andexhaust unit 62 for blocking off the atmosphere of each of the upper andlower transporting spaces A.

(13) In the foregoing embodiment, the first blowout unit 61 is disposedover each transporting space A, and the exhaust unit 62 disposed undereach transporting space. Instead, the first blowout unit 61 or exhaustunit 62 may be disposed laterally of each transporting space A. Thefirst blowout unit 61 and exhaust unit 62 may be shared by thetransporting spaces A₁ and A₂ (A₃ and A₄) of the same substratetreatment line Lu (Ld).

This invention may be embodied in other specific forms without departingfrom the spirit or essential attributes thereof and, accordingly,reference should be made to the appended claims, rather than to theforegoing specification, as indicating the scope of the invention.

What is claimed is:
 1. A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section, the method comprising the steps of: performing resist film forming treatment in parallel on at least two of a plurality of stories provided in the treating section, wherein the treating section includes the plurality of stories arranged vertically, each story having: treating units for treating substrates, and a main transport mechanism for transporting the substrates to the treating units on each story; and performing developing treatment in parallel on at least two of the plurality of stories provided in the treating section; a step executed in the interface section of receiving the substrates alternately from the respective stories on which the resist film forming treatment is performed, and transporting the substrates to an exposing machine provided as external apparatus; and a step executed in the interface section of receiving the substrates from the exposing machine, and transporting the substrates alternately to the respective stories on which the developing treatment is performed; wherein the step of transporting the substrates to the exposing machine is realized by an interface's transport mechanism provided for the interface section to repeat, while changing the stories from which the substrates are received, an operation to receive one substrate from one of the stories and transport the substrate to the exposing machine; the step of transporting the substrates alternately to the respective stories is realized by the interface's transport mechanism to repeat, while changing the stories to which the substrates are transported, an operation to receive one substrate from the exposing machine and transport the substrate to one of the stories; and the step of transporting the substrates to the exposing machine is executed to transport the substrates to the exposing machine in an order in which the substrates are taken out of a cassette placed on a cassette table provided for the indexer section.
 2. The substrate treating method of claim 1, comprising the step executed in the indexer section of taking the substrates out of a cassette placed on the cassette table and transporting the substrates alternately to the respective stories on which the resist film forming treatment is performed; the step of transporting the substrates alternately to the respective stories being realized by an indexer's transport mechanism provided for the indexer section to repeat, while changing the stories to which the substrates are transported, an operation to take one substrate out of the cassette and transport the substrate to one of the stories.
 3. The substrate treating method of claim 1, comprising the step executed in the indexer section of receiving the substrates alternately from the respective stories on which the developing treatment is performed, and storing the substrates in a cassette; the step of storing the substrates in the cassette being realized by an indexer's transport mechanism provided for the indexer section to repeat, while changing the stories from which the substrates are received, an operation to receive one substrate from one of the stories and store the substrate in the cassette.
 4. The substrate treating method of claim 1; wherein both the step of performing the resist film forming treatment and the step of performing the developing treatment are executed on each of the stories; the method further comprising the step executed in the indexer section of taking substrates out of a cassette, transporting the taken-out substrates alternately to the respective stories, and when transporting the substrates to the respective stories, receiving substrates alternately from the respective stories, and storing the received substrates in the cassette; the step being realized by an indexer's transport mechanism provided for the indexer section to repeat, while changing the stories, an operation to store one substrate in the cassette, take one substrate out of the cassette, transport the substrate to one of the stories, and receive one substrate from the one of the stories.
 5. The substrate treating method of claim 1, wherein the step of transporting the substrates to the exposing machine is executed to transport the substrates received from the respective stories on which the resist film forming treatment is performed to the exposing machine, instead of storing the substrates in the cassette placed on the cassette table provided for the indexer section.
 6. The substrate treating method of claim 1, wherein the step of transporting the substrates alternately to the respective stories is executed to transport the substrates received from the exposing machine to the respective stories on which the developing treatment is performed, instead of storing the substrates in the cassette placed on the cassette table provided for the indexer section.
 7. The substrate treating method of claim 1; wherein both the step of performing the resist film forming treatment and the step of performing the developing treatment are executed on each of the stories; the method further comprising the step executed in the interface section of receiving the substrates alternately from the respective stories, transporting the substrates to an exposing machine provided as external apparatus, receiving the substrates from the exposing machine, transporting the substrates to the respective stories, and when transporting the substrates to the respective stories, receiving the substrates from the respective stories; the step being realized by an interface's transport mechanism provided for the interface section to repeat, while changing the stories, an operation to transport one substrate to one of the stories, receive one substrate from the one of the stories, transport the substrate the exposing machine, and receive one substrate from the exposing machine.
 8. The substrate treating method of claim 1 wherein each of the stories for performing the resist film forming treatment of the substrates feeds the substrates to the interface section in an order in which the substrates are received from the indexer section.
 9. The substrate treating method of claim 1 wherein each of the stories for performing the developing treatment of the substrates feeds the substrates to the indexer section in an order in which the substrates are received from the interface section.
 10. The substrate treating method of claim 1 wherein controls for causing the respective stories to perform the resist film forming treatment of the substrates are independent of each other.
 11. The substrate treating method of claim 1 wherein controls for causing the respective stories to perform the developing treatment of the substrates are independent of each other.
 12. The substrate treating method of claim 1 wherein the step of performing the resist film forming treatment in parallel is executed to carry out a series of treating steps successively for the substrates, which treating steps include treatment for applying a resist film material to the substrates and treatment for heat-treating the substrates, periods of the series of treating steps being uniformed for the respective substrates.
 13. The substrate treating method of claim 1, comprising: the step executed in the indexer section of taking the substrates out of a cassette, and transporting the substrates to the respective stories on which the resist film forming treatment is performed; and the step executed in the interface section of receiving the substrates from the respective stories on which the resist film forming treatment is performed, and transporting the substrates to an exposing machine provided as external apparatus.
 14. The substrate treating method of claim 13 wherein, when a difference occurs between the order of the substrates received by the interface section from the stories on which the resist film forming treatment is performed, and the order of the substrates taken out of the cassette in the indexer section, the substrates are placed on buffers to enable the interface section to receive succeeding substrates from the respective stories on which the resist film forming treatment is performed.
 15. The substrate treating method of claim 13 wherein, when the substrates fail to be fed to the interface section from part of the stories on which the resist film forming treatment is performed and the substrates are fed to the interface section from other of the stories, the interface section transports the substrates fed from the other of the stories to the buffers.
 16. The substrate treating method of claim 15 wherein, when the substrates begin to be fed again from the part of the stories having stopped feeding the substrates, the interface section transports the substrates fed from the part of the stories and the substrates placed on the buffers, alternately to the exposing machine.
 17. The substrate treating method of claim 1, wherein the main transport mechanism of each story is confined to the story thereof and not shared in adjacent stories.
 18. The substrate treating method of claim 1, wherein the treating section includes a shielding plate disposed between the respective stories.
 19. The substrate treating method of claim 1, wherein: the indexer section transports the substrates between the treating section and a cassette; and the interface section transports the substrates between the treating section and an exposing machine provided as external apparatus. 